Effects of B2H6 pretreatment on ALD of W film using a sequential supply of WF6 and SiH4

Electrochemical and Solid-State Letters

Volumn 8, Issue 10, 2005, Pages

  Kim, Soo Hyun ^a   Hwang, Eui Seong ^a   Kim, Baek Mann ^a   Lee, Joo Wan ^a   Sun, Ho Jung ^a   Hong, Tae Eun ^a   Kim, Jun Ki ^a   Sohn, Hyunchul ^a   Kim, Jinwoong ^a   Yoon, Tae Sik ^b  

^a Hynix Semiconductor Inc   (South Korea)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; FILM GROWTH; NUCLEATION; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); RAPID NUCLEATION; THERMAL GROWTH; TUNGSTEN THIN FILMS;

BORON COMPOUNDS;

EID: 25644441800     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2035703     Document Type: Article

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