SCOPUS 정보 검색 플랫폼

Volumn 151, Issue 9, 2004, Pages

A process technology for 0.16 μm embedded DRAM with fast logic speed and small DRAM cell

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CAPACITORS; DIELECTRIC FILMS; DYNAMIC RANDOM ACCESS STORAGE; MOS DEVICES; OXIDATION; PROBLEM SOLVING;

CHANNEL TRANSISTORS; LOGIC OPEN ETCH (LOE); METAL-INSULATOR-METAL (MIM) CAPACITORS; SELF-ALIGNED SALICIDE BLOCKING (SSB);

LOGIC DEVICES;

EID: 4944232544 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1779629 Document Type: Article

Times cited : (5)

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