Characterizations of pulsed chemical vapor deposited-tungsten thin films for ultrahigh aspect ratio W-plug process

Journal of the Electrochemical Society

Volumn 152, Issue 6, 2005, Pages

  Kim, Soo Hyun ^a   Hwang, Eui Sung ^a   Ha, Seung Chul ^a,b   Pyi, Seung Ho ^a   Sun, Ho Jung ^a   Lee, Joo Wan ^a   Kawk, Nohjung ^a   Kim, Jun Ki ^a   Sohn, Hyunchul ^a   Kim, Jinwoong ^a  

^a Hynix Semiconductor Inc   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CHARACTERIZATION; CHEMICAL MECHANICAL POLISHING; CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; NUCLEATION; SURFACE ROUGHNESS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

CONFORMALITY; PLASMA DENSIFICATION; ULTRAHIGH ASPECT RATIO; W-PLUG FILL PROCESSES;

TUNGSTEN;

EID: 22544438454     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1897355     Document Type: Article

References (42)

1. J. E. J. Schmitz, Chemical Vapor Deposition of Tungsten and Tungsten Silicide, Noyes, Park Ridge, NJ (1992).
2. E. K. Broadbent and C. L. Ramiller, J. Electrochem. Soc., 131, 1427 (1984).
3. C. M. McConica and K. Krishnamani, J. Electrochem. Soc., 133, 2542 (1986).
4. E. J. McInerney, T. W. Mountsier, B. L. Chin, and E. K. Broadbent, J. Vac. Sci. Technol. B, 11, 734 (1993).
5. S. Sivaram, M. L. Dass, C. S. Wei, B. Tracy, and R. Shukla, J. Vac. Sci. Technol. A, 11, 87 (1993).
6. F. Cumpian, E. Flannigan, and C. Magnella, Advanced Metallization and Interconnect Systems for ULSI Applications in 1995, Russell C. Ellwagner and S.-Q. Wang, Editors, pp. 529, Portland, OR, Oct 3-5, 1995.
7. L Ulmer, J. C. Veler, L. Georges, T. Morel, D. Poncet, M. Bakli, and V. Ferrier, Advanced Metallization and Interconnect Systems for ULSI Applications in 1995, Russell C. Ellwagner and S.-Q. Wang, Editors, pp. 569, Portland, OR, Oct 3-5, 1995.
8. S. B. Herner, S. A. Desai, A. Nak, and S. G. Ghanayem, Electrochem. Solid-State Lett., 2, 398 (1999).
9. S. L. Lantz, A. E. Bell, W. K. Ford, and D. Danielson, J. Vac. Sci. Technol. A, 12, 1032 (1994).
10. G. Ramanath, J. E. Greene, J. R. A. Carlsson, L. H. Allen, V. C. Hornback, and D. J. Allman, Appl. Phys. Lett., 69, 3179 (1996).
11. G. Ramanath, J. E. Greene, J. R. A. Carlsson, L. H. Allen, V. C. Hornback, and D. J. Allman, J. Appl. Phys., 85, 1961 (1999).
12. S. B. Herner, Y. Tanaka, H. Zhang, and S. G. Ghanayem, J. Electrochem. Soc., 147, 1982 (2000).
13. S. Parikh, L. Akselrod, J. Gardner, K. Armstrong, and N. Parekh, Thin Solid Films, 320, 26 (1998).
14. T. Suntola, Handbook of Crystal Growth, Vol. 3, Chap. 14, D. T. J. Hurle, Editor, Elsevier Science B. V., Amsterdam (1994).
15. J. W. Klaus, S. J. Ferro, and S. M. George, Thin Solid Films, 360, 145 (2000).
16. S.-H. Lee, L. Gonzalez, Josh Collins, K. Ashitani, and K. Levy, Mater. Res. Soc. Symp. Proc., XVII, 649 (2002).
17. T. Omstead, G. Chris D'Couto, S.-H. Lee, P. Wongsenkaum, J. Collins, and K. Levy, Solid State Technol., 51, 45 (2002).
18. M. Yang, H. Chung, A. Yoon, H. Fang, A. Zhang, C. Knepfler, R. Jackson, J. S. Byun, A. Mak, M. Eizenberg, M. Xi, M. Kori, and A. K. Sinha, Mater. Res. Soc. Symp. Proc., XVI, 655 (2002).
19. S.-H. Kim, E.-S. Hwang, S.-Y. Han, I.-H. Lee, S.-H. Pyi, N.-J. Kwak, H. Sohn, and J. Kim, Electrochem. Solid-State Lett., 7, G195 (2004).
20. M. Danek, M. Liao, J. Tseng, K. Littau, D. Saigal, H. Zhang, R. Mosely, and M. Eizenberg, Appl. Phys. Lett., 68, 1015 (1996).
21. Julian L. Hsieh, J. Vac. Sci. Technol. A, 11, 3040 (1993).
22. C. A. van der Jegud, G. C. A. M. Janssen, andS. Radelaar, J. Appl. Phys., 72, 1583 (1992).
23. N. Kobayashi and H. Goto, J. Appl. Phys., 69, 1013 (1991).
24. M. L. Yu and B. N. Eldridge, J. Vac. Sci. Technol. A, 7, 625 (1989).
25. M. Eizenberg, K. Littau, S. Ghanayem, M. Liao, R. Mosely, and A. K. Sinha, J. Vac. Sci. Technol. A, 13, 590 (1995).
26. K.-C. Park, S.-H. Kim, and K.-B. Kim, J. Electrochem. Soc., 147, 2711 (2000).
27. S.-H. Kim, S.-J. Im, and K.-B. Kim, Thin Solid Films, 415, 177 (2002).
28. P. M. Petroff, A. K. Sinha, T. T. Sheng, H. J. Levinstein, and F. B. Alexander, J. Appl. Phys., 44, 2545 (1973).
29. H. H. Busta and C. H. Tang, J. Electrochem. Soc., 133, 1195 (1986).
30. C. C. Tang and D. W. Hess, Appl. Phys. Lett., 45, 633 (1984).
31. A. K. Sinha, Prog. Mater. Sci., 15, 92 (1972).
32. Y. G. Shen, Y. W. Mai, Q. C. Zhang, D. R. Mckenzie, W. D. McFall, and W. E. McBride, J. Appl. Phys., 87, 117 (2000).
33. R. S. Wagner, A. K. Sinha, T. T. Sheng, H. H. Levinstein, and F. B. Alexander, J. Vac. Sci. Technol., 11, 582 (1974).
34. D. C. Paine, J. C. Bravman, and C. Y. Yang, Appl. Phys. Lett., 50, 498 (1987).
35. J. Ligot, S. Benayoun, and J. J. Hantzpergue, J. Vac. Sci. Technol. A, 19, 798 (2001).
36. H.-D. Liu, Y.-P. Zhao, G. Ramanath, S. P. Murarka, and G.-C. Wang, Thin Solid Films, 384, 151 (2001).
37. S. M. Rossnagel, J. Vac. Sci. Technol. B, 20, 2328 (2002).
38. T. S. Kuan, C. K. Inoki, G. S. Oehrlein, K. Ross, Y.-P. Zhao, G.-C. Wang, S. M. Rossnagel, and C. Cabral, Jr., Mater. Res. Soc. Symp. Proc., 612, D7.1.1 (2000).
39. I. A. Weerasekera, S. I. Shah, D. V. Baxter, and K. M. Unruh, Appl. Phys. Lett., 64, 3231 (1994).
40. F. Meyer, D. Bouchier, V. Stambouli, C. Pellet, C. Schwebel, and G. Gautherin, Appl. Surf. Sci., 38, 286 (1989).
41. A. J. Lean and D. W. Foster, J. Appl. Phys., 58, 2001 (1985).
42. A. F. Mayadas and M. Shatzkes, Phys. Rev. B, 1, 1382 (1970).