Direct evaluation of surface roughness of substrate and interfacial roughness in molybdenum/silicon multilayers using extreme ultraviolet reflectometer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 9 B, 2007, Pages 6128-6134

  Hosoya, Morio ^a   Sakaya, Noriyuki ^a   Nozawa, Osamu ^a   Shiota, Yuki ^a   Shimojima, Shoji ^a   Shoki, Tsutomu ^a   Watanabe, Takeo ^b   Kinoshita, Hiroo ^b  

^a HOYA CORPORATION   (Japan)

^b UNIVERSITY OF HYOGO   (Japan)

Author keywords

AFM; EUV; Lithography; Mo Si multilayer; Reflectivity; Reflectometer; Roughness; Scattering; XRR

Indexed keywords

ATOMIC FORCE MICROSCOPY; EXTREME ULTRAVIOLET LITHOGRAPHY; LIGHT SCATTERING; MULTILAYERS; REFLECTION; REFLECTOMETERS;

DEPOSITION GEOMETRY; MO/SI MULTILAYER; SCATTERING RAYS; X-RAY REFLECTIVITY (XRR);

SURFACE ROUGHNESS;

EID: 34648812832     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.6128     Document Type: Article

References (31)

1. J. H. Underwood, E. M. Gukllikson, and K. Nguyen: Appl. Opt. 32 (1993) 6985.
2. H. Nii, M. Niibe, H. Kinoshita, and Y. Sugei: J. Synchrotoron Radiat. 5 (1998) 702.
3. B. L. Henke, E. M. Gullikson, and J. C. Davi: At. Data Nucl. Data Tables 54 (1993) 181.
4. J. H. Hubbell, W. J. Veigele, E. A. Briggs, R. T. Brown, D. T. Cromer, and R. J. Howerton: J. Phys. Chem. Ref. Data 4 (1975) 471 [Errata; 6 (1977) 615].
5. E. Spiller: in Physics, Fabrication and Application of Multilayered Structures, ed. P. Dhez and C. Weisbuch (Plenum, New York, 1987) p. 271.
6. V. G. Kohn: Phys. Status Solidi B 187 (1995) 61.
7. B. Mirkarimi and C. Montcalm: Proc. SPIE 3331 (1998) 133.
8. R. Soufli, D. L. Windt, J. C. Robinson, S. L. Baker, E. Spilled, F. J. Dollar, A. L. Aquila, E. M. Gullikson, B. Kjomrattanawanich, J. F. Seely, and L. Golub: Proc. SPIE 5901 (2005) 173.
9. M. Ishii, S. Iwai, T. Ueki, and Y. Aoyagi: Appl. Opt. 36 (1997) 2152.
10. S. Yulin, T. Feigl, T. Kuhlmann, N. Kaiser, A. I. Fedorenko, V. V. Kondratenko, O. V. Poltseva, V. A. Sevryukova, A. Yu. Zolotaryov, and E. N. Zubarev: J. Appl. Phys. 92 (2002) 1216.
11. C. Montcalm, S. Bajit, P. B. Mirkarimi, E. Spiller, F. J. Weber, and J. A. Folta: Proc. SPIE 3331 (1998) 42.
12. S. Braun, H. Mai, M. Moss, R. Scholz, and A. Leson: Jpn. J. Appl. Phys. 41 (2002) 4074.
13. B. T. Lee, E. Hoshino, and M. Takahashi: Jpn. J. Appl. Phys. 40 (2001) 6998.
14. S. Y. Lee, T. G. Kim, and J. Ahn: Jpn. J. Appl. Phys. 42 (2003) 3792.
15. M. Shiraishi, W. Ishiyama, T. Oshino, and K. Murakami: Jpn. J. Appl. Phys. 39 (2000) 6810.
16. R. Schlatmann, C. Lu, J. Verhoeven, E. J. Puik, and M. J. van der Wiel: Appl. Surf. Sci. 78 (1994) 147.
17. H.-J. Voorma, E. Louis, F. Bijkerk, and S. Abdali: J. Appl. Phys. 82 (1997) 1876.
18. D. L. Windt, W. K. Waskiewics, and J. E. Griffith: Appl. Opt. 33 (1994) 2025.
19. D. G. Stearns, D. P. Gaines, and D. W. Sweeney: J. Appl. Phys. 84 (1998) 1003.
20. D. K. G. de Boer: Phys. Rev. B 51 (1995) 5297.
21. E. M. Gullikson: Proc. SPIE 3331 (1998) 72.
22. N. Kandata, T. Kobayashi, T. Komiya, M. Shiraishi, T. Oshino, and K. Murakami: presented at 3rd Int. EUVL Symp. Miyazaki, Japan, 2004, Mu-P-04.
23. S. P. Vernon, D. G. Stearns, and R. Rosen: Appl. Opt. 32 (1993) 6969.
24. T. Hirano, H. Wada, M. Otaki, and R. Matsuo: Proc. SPIE 4066 (2000) 503.
25. M. Ishino, O. Yoda, Y. Haishi, F. Arimoto, M. Takeda, S. Watanabe, S. Ohnuki, and H. Abe: Jpn. J. Appl. Phys. 41 (2002) 3052.
26. S. Y. Lee, H. J. Kim, J. Ahn, I. Y. Kang, and Y.-C. Chung: J. Korean Phys. Soc. 41 (2002) 427.
27. D. G. Stearns: J. Appl. Phys. 71 (1992) 4286.
28. V. Holý and T. Baumbach: Phys. Rev. B 49 (1994) 10668.
29. N. Miyata, S. Ishikawa, M. Yanagihara, and M. Watanabe: Jpn. J. Appl. Phys. 38 (1999) 6476.
30. J. Vesenka, M. Guthold, C. L. Tang, D. Keller, E. Delaine, and C. Bustamante: Ultramicroscopy 42-44 (1992) 1243.
31. M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate, and K. Murase: Jpn. J. Appl. Phys. 34 (1995) 3382.