Approach to patterning of extreme ultraviolet lithography masks using Ru buffer layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 12, 2001, Pages 6998-7001

  Lee, Byoung Taek ^a   Hoshino, Eiichi ^a   Takahashi, Masashi ^a   Yoneda, Takashi ^a   Yamanashi, Hiromasa ^a   Hoko, Hiromasa ^a   Ryoo, ManHyoung ^a   Chiba, Akira ^a   Ito, Masaaki ^a   Sugawara, Minoru ^a   Ogawa, Tarou ^a   Okazaki, Sinji ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Buffer layer; Etching selectivity; Extreme ultraviolet lithography (EUVL); Mask patterning; Ru

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHLORINE; ETCHING; ION BEAMS; MASKS; MULTILAYERS; PHOTOLITHOGRAPHY; RUTHENIUM; SILICA; TANTALUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION;

BUFFER LAYER; ETCHING SELECTIVITY; EXTREME ULTRAVIOLET LITHOGRAPHY; MASK PATTERNING; RUTHENIUM FILM;

SEMICONDUCTING FILMS;

EID: 0035710469     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.6998     Document Type: Article

References (10)