GaN-based light-emitting diodes prepared on vicinal sapphire substrates

IET Optoelectronics

Volumn 1, Issue 1, 2007, Pages 23-26

  Lin, J C ^a   Su, Y K ^a   Chang, S J ^a   Lan, W H ^b   Huang, K C ^c   Chen, W R ^d   Cheng, Y C ^e   Lin, W J ^e  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^e CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTROLUMINESCENCE; GALLIUM NITRIDE; SAMPLING; SAPPHIRE; SUBSTRATES;

CURRENT INJECTION; ELECTROLUMINESCENCE INTENSITY; INDIUM ATOMS; SAPPHIRE SUBSTRATES;

LIGHT EMITTING DIODES;

EID: 34548409979     PISSN: 17518768     EISSN: None     Source Type: Journal    
DOI: 10.1049/iet-opt:20060031     Document Type: Article

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