Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes

IEEE Electron Device Letters

Volumn 24, Issue 3, 2003, Pages 129-131

  Chang, S J ^a   Chen, C H ^b   Su, Y K ^a   Sheu, J K ^c   Lai, W C ^a   Tsai, J M ^d   Liu, C H ^e   Chen, S C ^f  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHENG SHIU UNIVERSITY   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^d South Epitaxy Corporation   (Taiwan)

^e NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

^f NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Electrostatic discharge (ESD); GaN; LED; Schottky diode

Indexed keywords

ELECTRIC DISCHARGES; ELECTRIC POTENTIAL; ELECTROSTATICS; ETCHING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

ELECTROSTATIC DISCHARGE; INDIUM GALLIUM NITRIDE;

LIGHT EMITTING DIODES;

EID: 0037938630     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.809043     Document Type: Letter

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