Nitride-based LEDs with an SPS tunneling contact layer and an ITO transparent contact

IEEE Photonics Technology Letters

Volumn 16, Issue 4, 2004, Pages 1002-1004

  Chang, S J ^a   Chang, C S ^a   Su, Y K ^a   Chuang, R W ^a   Lai, W C ^a   Kuo, C H ^a   Hsu, Y P ^a   Lin, Y C ^a   Shei, S C ^b   Lo, H M ^b   Ke, J C ^b   Sheu, J K ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b South Epitaxy Corporation   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

GaN; Indium tin oxide (ITO); Light emitting diode (LED); Short period superlattice (SPS)

Indexed keywords

DEPOSITION; ELECTRIC RESISTANCE; ELECTRON TUNNELING; GALLIUM NITRIDE; GLASS; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SUPERLATTICES;

INDIUM TIN OXIDE; SHORT PERIOD SUPERLATTICES; TRANSPARENT CONTACT; TUNNELING CONTACT LAYER;

LIGHT EMITTING DIODES;

EID: 11144355767     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.824667     Document Type: Article

References (16)

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