Reduction of spontaneous surface segregation in (InP)2/(GaP)2 quantum wells grown on tilted substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 1, 1999, Pages 17-21

  Cheng, Yi Cheng ^a   Tai, Kuochou ^a   Chou, Shu Tsun ^b   Huang, Kai Feng ^a   Lin Wen Jen, ^c   Lin Alpha, C H ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Chung Cheng Institute of Teclmology   (Taiwan)

^c CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Polarized PL; SPS; SSMBE; Surface segregation

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM PHOSPHIDE; SHORT PERIOD SUPERLATTICES; SURFACE SEGREGATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032628298     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.38.17     Document Type: Article

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