Effect of well profile on optical and structural properties in InGaN/GaN quantum wells and light emitting diodes

Physica Status Solidi (A) Applied Research

Volumn 200, Issue 1, 2003, Pages 62-66

  Shim, H W ^a   Suh, E K ^a   Hong, C H ^a   Kim, Y W ^b   Lee, H J ^a  

^a Chonbuk National University   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

LIGHT EMISSION EFFICIENCY; QUANTUM WELL SHAPE;

LIGHT EMITTING DIODES;

EID: 0347516485     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303328     Document Type: Article

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