Enhanced luminescence efficiency due to exciton localization in self-assembled InGaN/GaN quantum dots

Solid State Communications

Volumn 113, Issue 9, 2000, Pages 495-498

  Grandjean, N ^a   Damilano, B ^a   Massies, J ^a   Dalmasso, S ^a  

^a CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL ORIENTATION; EXCITONS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

STRANSKI-KRASTANOV GROWTH MODE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033900261     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00531-1     Document Type: Article

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