Low-temperature-grown GaAs: Modeling of transient reflectivity experiments

Journal of Applied Physics

Volumn 102, Issue 4, 2007, Pages

  Ortiz, V ^a   Nagle, J ^a   Lampin, J F ^b   Pronne E ^c,d,e   Alexandrou, A ^d  

^a THALES RESEARCH AND TECHNOLOGY   (France)

^b INSTITUT D ELECTRONIQUE   (France)

^c LABORATOIRE D OPTIQUE APPLIQUÉE   (France)

^d LABORATOIRE D OPTIQUE ET BIOSCIENCES   (France)

^e INSTITUT DES NANOSCIENCES DE PARIS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; INFRARED TRANSMISSION; MATHEMATICAL MODELS; TRANSIENT ANALYSIS;

ACCEPTOR (NA); ANNEAL-RELATED PARAMETERS; DEEP-DONOR (NDD); LOW-TEMPERATURE-GROWN GAAS (LT-GAAS) MATERIALS; MIDINFRARED TRANSMISSION; PUMP WAVELENGTH; SHOCKLEY-READ-HALL RECOMBINATION MODEL; TRANSIENT REFLECTIVITY EXPERIMENTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 34548380476     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2763971     Document Type: Article

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