Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1594-1597

  Liu, W K ^a   Lubyshev, D I ^a   Specht, P ^b   Zhao, R ^b   Weber, E R ^b   Gebauer, J ^c   SpringThorpe, A J ^d   Streater, R W ^d   Vijarnwannaluk, S ^e   Songprakob, W ^e   Zallen, R ^e  

^a Quantum Epitaxial Designs Inc   (United States)

^b Lawrence Berkeley National Laboratory   (United States)

^c MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^d NORTEL NETWORKS   (Canada)

^e VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON INORGANIC COMPOUNDS; CRYSTAL DEFECTS; DISSOCIATION; MOLECULAR BEAM EPITAXY; RADIATION HARDENING; REDUCTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

ARSENIC ANTISITE DEFECTS; CARBON TETRABROMIDE;

SEMICONDUCTOR MATERIALS;

EID: 0034187456     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591434     Document Type: Article

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