Correlation between defect concentration and carrier lifetime of GaAs grown by molecular beam epitaxy at different temperatures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 11, 2002, Pages 6239-6242

  Lin, Gong Ru ^a   Liu, Tze An ^a   Pan, Ci Ling ^a  

^a NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

Carrier lifetime; Defect; LT GaAs; MBE; Photo reflectivity; Pump probe; Ultrafast

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ENERGY GAP; HOT CARRIERS; LOW TEMPERATURE OPERATIONS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; POINT DEFECTS; SOLID STATE LASERS; SPECTROSCOPY; ULTRAFAST PHENOMENA;

BAND GAP RENORMALIZATION EFFECT; CARRIER LIFETIME; DEFECT CONCENTRATION; DENSE ARSENIC ANTISITE DEFECT; LOW TEMPERATURE GALLIUM ARSENIDE; OPTICAL REFLECTIVITY SPECTROSCOPY; PUMP-PROBE; SHOCKLEY-READ-HALL MODEL; TIME RESOLVED PHOTOREFLECTIVITY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036155401     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.6239     Document Type: Article

References (26)

1. Special issue on low temperature grown GaAs and related materials
2. Special issue on the optical and electron-beam control of semiconductor switches