Photoconductivity sampling of low-temperature-grown Be-doped GaAs layers

Journal of Applied Physics

Volumn 98, Issue 3, 2005, Pages

  Eusebe H ^a   Roux, J F ^a   Coutaz, J L ^a   Krotkus, A ^b  

^a UNIVERSITÉ DE SAVOIE   (France)

^b CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PULSES; ELECTRON TRAPPING PROCESSES; HIGH-OPTICAL DENSITY EXCITATION; METAL-SEMICONDUCTOR-METAL STRUCTURE;

ANNEALING; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRON TRAPS; LOW TEMPERATURE OPERATIONS; PHOTOCONDUCTIVITY; SEMICONDUCTOR GROWTH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 23944496635     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2001151     Document Type: Article

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