메뉴 건너뛰기




Volumn 77, Issue 15, 2000, Pages 2349-2351

Investigation of deep electronic centers in low-temperature grown GaAs using extremely thin layers

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001684021     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1316078     Document Type: Article
Times cited : (6)

References (11)
  • 5
    • 0345871468 scopus 로고
    • edited by M. Godlewski World Scientific, Singapore
    • G. L. Witt, in Semi-Insulating III-V Materials, edited by M. Godlewski (World Scientific, Singapore, 1994), p.297.
    • (1994) Semi-Insulating III-V Materials , pp. 297
    • Witt, G.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.