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Journal of Applied Physics

Volumn 88, Issue 10, 2000, Pages 6026-6031

Dependence of the carrier lifetime on acceptor concentration in GaAs grown at low-temperature under different growth and annealing conditions

(6) Stellmacher, M a Nagle, J a Lampin, J F b,c Santoro, P b Vaneecloo, J b Alexandrou, A b

a THALES (France)

b LABORATOIRE D OPTIQUE APPLIQUÉE (France)

c Institut Superieur de l'Electronique et du Numerique (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001295382 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1285829 Document Type: Article

Times cited : (45)

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