Depth resolved study of impurity sites in low energy ion implanted As in Si

Journal of Applied Physics

Volumn 102, Issue 4, 2007, Pages

  D'Acapito, Francesco ^a   Milita, Silvia ^b   Satta, Alessandra ^b   Colombo, Luciano ^b  

^a EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ION IMPLANTATION; SILICON;

DEPTH-RESOLVED MODE; IMPURITY SITES; SUBSTITUTIONAL SITES; X-RAY ABSORPTION FINE STRUCTURE;

IMPURITIES;

EID: 34548379053     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2770868     Document Type: Article

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