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Volumn 88, Issue 10, 2002, Pages 1055061-1055064
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Formation of vacancy-impurity complexes by kinetic processes in highly as-doped Si
a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CRYSTAL DEFECTS;
CRYSTAL IMPURITIES;
DIFFUSION;
FIELD EFFECT TRANSISTORS;
HEAT TREATMENT;
ION IMPLANTATION;
KINETIC THEORY;
POSITRON ANNIHILATION SPECTROSCOPY;
POSITRONS;
SEMICONDUCTOR DOPING;
VACANCY IMPURITY CLUSTERS;
SEMICONDUCTING SILICON;
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EID: 0037061213
PISSN: 00319007
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (63)
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References (19)
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