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Volumn 88, Issue 10, 2002, Pages 1055061-1055064

Formation of vacancy-impurity complexes by kinetic processes in highly as-doped Si

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DIFFUSION; FIELD EFFECT TRANSISTORS; HEAT TREATMENT; ION IMPLANTATION; KINETIC THEORY; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; SEMICONDUCTOR DOPING;

EID: 0037061213     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (63)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.