A comprehensive solution for simulating ultra-shallow junctions: From high dose/low energy implant to diffusion annealing

Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 409-414

  Boucard, F ^a   Roger, F ^a   Chakarov, I ^a   Zhuk, V ^a   Temkin, M ^a   Montagner, X ^a   Guichard, E ^a   Mathiot, D ^b  

^a Silvaco Data Systems Inc   (United States)

^b CNRS   (France)

Author keywords

Diffusion; Dopant; Implantation; Process modeling; Silicon; TCAD

Indexed keywords

ANNEALING; COMPUTER SIMULATION; DIFFUSION; ENERGY UTILIZATION; ION IMPLANTATION; PARAMETER ESTIMATION; SILICON;

DOPANT; IMPLANTATION; PROCESS MODELING; TCAD;

SEMICONDUCTOR JUNCTIONS;

EID: 27844600087     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.08.120     Document Type: Conference Paper

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