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Volumn 82, Issue 9, 1999, Pages 1883-1886

Identification of vacancy-impurity complexes in highly n-type Si

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001010910     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.82.1883     Document Type: Article
Times cited : (90)

References (19)
  • 12
    • 0004200984 scopus 로고
    • S. Pantelides, Gordon and Breach, New York
    • G. D. Watkins, in Deep Centers in Semiconductors, S. Pantelides (Gordon and Breach, New York, 1986), p. 147.
    • (1986) Deep Centers in Semiconductors , pp. 147
    • Watkins, G.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.