SCOPUS 정보 검색 플랫폼

Volumn 16, Issue 50, 2004, Pages 9117-9126

Enhanced dopant solubility in strained silicon

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BORON; DOPING (ADDITIVES); FERMI LEVEL; PROBABILITY DENSITY FUNCTION; SOLUBILITY; STRAIN; TENSILE PROPERTIES;

BIAXIAL STRAIN; DOPANTS; STRAINED SILICON; TENSILE STRAIN;

SILICON;

EID: 10944226756 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/16/50/002 Document Type: Article

Times cited : (3)

References (11)

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2
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- x epitaxial layers
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3
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- Boron and phosphorus diffusion in strained and relaxed Si and SiGe
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- Zangenberg, N.R.¹ Fage-Pedersen, J.² Lundsgaard Hansen, J.³ Nylandsted Larsen, A.⁴

4
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- Large enhancement of boron solubility in silicon due to biaxial stress
- Sadigh B, Lenosky T J, Caturla M-J, Quong A A, Benedict L A, Diaz de la Rubia T, Giles M M, Foad M, Spataru C D and Louie S G 2002 Large enhancement of boron solubility in silicon due to biaxial stress Appl. Phys. Lett. 80 4738-40
- (2002) Appl. Phys. Lett. , vol.80 , pp. 4738-4740
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6
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9
- 0004005306
- New York: Wiley-Interscience
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10
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- Lattice relaxation around impurity atoms in semiconductors - Arsenic in silicon - A comparison between experiment and theory
- Koteski V, Ivanovic N, Haas H, Holub-Krappe E and Mahnke H-E 2003 Lattice relaxation around impurity atoms in semiconductors - arsenic in silicon - a comparison between experiment and theory Nucl. Instrum. Methods B 200 60-5
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11
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.