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Volumn 114-115, Issue SPEC. ISS., 2004, Pages 386-389

The atomic site of as implanted in Si at ultra-low energies

Author keywords

Arsenic; Doping and impurity implantation; Extended X ray absorption fine structure (EXAFS); Silicon

Indexed keywords

ARSENIC; DATA REDUCTION; DOPING (ADDITIVES); HEATING; PROBABILITY; SEMICONDUCTOR JUNCTIONS; SILICON; X RAY ANALYSIS;

EID: 10844255949     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.08.001     Document Type: Conference Paper
Times cited : (8)

References (25)
  • 22
    • 85165486426 scopus 로고    scopus 로고
    • Ph.D. Thesis, Universita' di Padova
    • C. Maurizio, Ph.D. Thesis, Universita' di Padova, 2001.
    • (2001)
    • Maurizio, C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.