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Materials Science and Engineering: B

Volumn 114-115, Issue SPEC. ISS., 2004, Pages 381-385

Studies of ultra shallow n+-p junctions formed by low-energy As-implantation

(4) Girginoudi, D a Georgoulas, N a Thanailakis, A a Polychroniadis, E K b

a DEMOCRITUS UNIVERSITY OF THRACE (Greece)

b ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

Author keywords

Low energy implantation; Rapid thermal annealing; Transmission electron microscopy; Ultra shallow junction

Indexed keywords

ACTIVATION ANALYSIS; ARSENIC; COMPUTER SIMULATION; DIFFUSION; ION IMPLANTATION; RAPID THERMAL ANNEALING; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION LOOPS; IMPLANTATION ENERGY; LOW-ENERGY IMPLANTATION; ULTRA-SHALLOW JUNCTION;

SEMICONDUCTOR JUNCTIONS;

EID: 10644246735 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2004.07.068 Document Type: Conference Paper

Times cited : (11)

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