SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 532-535, Issue , 2003, Pages 746-753

Thermal oxidation of As and Ge implanted Si(1 0 0)

(7) Colonna, S a Terrasi, A b Scalese, S c Iacona, F c Raineri, V c La Via, F c Mobilio, S d

a CNR (Italy)

b UNIVERSITY OF CATANIA (Italy)

c CNR (Italy)

d ROMA TRE UNIVERSITY (Italy)

Author keywords

Atomic force microscopy; Extended X ray absorption fine structure (EXAFS); Ion implantation; Oxidation; Silicon

Indexed keywords

ABSORPTION SPECTROSCOPY; ARSENIC; ATOMIC FORCE MICROSCOPY; DIFFUSION; GERMANIUM; INTERFACES (MATERIALS); PRECIPITATION (CHEMICAL); SEGREGATION (METALLOGRAPHY); SEMICONDUCTING SILICON; SINGLE CRYSTALS; SUBSTRATES; THERMAL EFFECTS; THERMOOXIDATION; X RAY SPECTROSCOPY;

EXTENDED X-RAY ABSORPTION FINE STRUCTURE (EXAFS);

SURFACE ROUGHNESS;

EID: 0038183827 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(03)00216-4 Document Type: Conference Paper

Times cited : (8)

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