Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device

Solid-State Electronics

Volumn 48, Issue 9, 2004, Pages 1555-1562

  Saito, Wataru ^a   Omura, Ichiro ^a   Ogura, Tsuneo ^a   Ohashi, Hiromichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Diamond; GaN; Lateral FET; Power device; Wide band gap semiconductor

Indexed keywords

CARRIER MOBILITY; DIAMONDS; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; HEAT LOSSES; MOSFET DEVICES; SEMICONDUCTING GALLIUM COMPOUNDS; SWITCHING;

POWER DEVICES; POWER-SWITCHING DEVICES; SUBSTRATE RESISTANCE; WIDE BAND-GAP SEMICONDUCTORS (WBS);

SEMICONDUCTOR DEVICES;

EID: 2942659589     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.10.003     Document Type: Conference Paper

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