Optical emission spectrometry of plasma in low-damage sub-100 nm tungsten gate reactive ion etching process for compound semiconductor transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 10 B, 2006, Pages 8364-8369

  Li, Xu ^a   Zhou, Haiping ^a   Wilkinson, Chris D W ^a   Thayne, Iain G ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Compound semiconductor; Low damage; Optical emission spectrometry; RIE; Tungsten

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; OPTICAL EMISSION SPECTROSCOPY; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SHEET RESISTANCE; TUNGSTEN;

COMPOUND SEMICONDUCTOR; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); LOW DAMAGE; PLASMA-INDUCED DAMAGE;

GATES (TRANSISTOR);

EID: 34547922813     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.8364     Document Type: Article

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