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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 807-811

Tungsten gate technology for quarter-micron application

(5) Noda, Hiromasa a Sakiyama, Hideyuki a Goto, Yasushi a Kure, Tokuo a Kimura, ShiN'Ichiro a

a HITACHI LTD (Japan)

Author keywords

Counter doping; Microwave plasma etching; MOSFET; Silicon; Tungsten gate

Indexed keywords

CHLORINE; DIELECTRIC PROPERTIES; DRY ETCHING; ELECTRODES; MOSFET DEVICES; OXIDES; PLASMA ETCHING; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; TUNGSTEN; VOLTAGE CONTROL;

COUNTER DOPING; GATE OXIDE; THRESHOLD VOLTAGE CONTROL; TUNGSTEN GATE ELECTRODE;

GATES (TRANSISTOR);

EID: 0030085977 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.807 Document Type: Article

Times cited : (9)

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