Particle formation rates in sulfur hexafluoride plasma etching of silicon

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 2, 1996, Pages 550-555

  Garrity, Mary P ^a,b   Peterson, Thomas W ^a   O'Hanlon, John F ^a  

^a University of Arizona   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; DISSOCIATION; MASS SPECTROMETRY; MOLECULAR WEIGHT; MORPHOLOGY; PARTICLES (PARTICULATE MATTER); SILICON WAFERS; SPECTROSCOPY;

OPTICAL EMISSION SPECTROSCOPY; PARTICLE FORMATION; SULFUR HEXAFLUORIDE PLASMA ETCHING;

PLASMA ETCHING;

EID: 0030108997     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580143     Document Type: Article

References (37)

1. R. M. Roth, K. G. Spears, and G. Wong, Appl. Phys. Lett. 45, 28 (1984).
2. S. G. Geha, R. N. Carlile, J. F. O'Hanlon, and G. S. Selwyn, J. Appl. Phys. 72, 374 (1992).
3. G. S. Selwyn, J. Singh, and R. S. Bennett, J. Vac. Sci. Technol. A 7, 2758 (1989).
4. J. A. Durham, M.S. thesis, Rensselaer Polytechnic Institute, Troy, NY, 1989.
5. B. Walsh, M. Horanyi, and S. Robertson, IEEE Trans. Plasma Sci. PS-22, 97 (1994).
6. R. Nowlin and R. N. Carlile, J. Vac. Sci. Technol. A 9, 2825 (1991).
7. J. J. Wu and R. J. Miller, J. Appl. Phys. 67, 1051 (1990).
8. M. P. Garrity, T. W. Peterson, L. M. Garrett, and J. F. O'Hanlon, J. Vac. Sci. Technol. 13, 2939 (1995).
9. S. J. Choi and M. J. Kushner, J. Appl. Phys. 74, 853 (1993).
10. Y. Watanabe, M. Shiratani, Y. Kubo, I. Ogawa, and S. Ogi, Appl. Phys. Lett. 53, 1263 (1988).
11. M. Shiratani, T. Fukuzawa, and Y. Watanabe, IEEE Trans. Plasma Science, Special Issue on Charged Dust in Plasmas, edited by J. Goree PS-21 (1994).
12. L. J. Overset, Y. Lin, and L. Luo, J. Appl. Phys. 72, 5579 (1992).
13. A. A. Howling, L. Sansonnes, J. Dorier, and Ch. Hollenstein, J. Appl. Phys. 26, 1003 (1993).
14. L. Boufendi, A. Plain, J. Ph. Blondeau, A. Bouchoule, C. Laure, and M. Toogood, Appl. Phys. Lett. 60, 169 (1992).
15. J. J. Wu, M. T. Tinker, R. J. Miller, H. L. Wolfe, K. J. Stein, and J. C. Malinowski, Proceedings of the Sixth Automated IC Manufacturing Symposium (The Electrochemical Society, Pennington, NJ, 1990).
16. H. M. Anderson, R. Jairath, and J. L. Mock, J. Appl. Phys. 67, 3999 (1990).
17. W. J. Yoo and Ch. Steinbruchel, Appl. Phys. Lett. 60, 1073 (1992).
18. W. W. Stoffels, E. Stoffels, G. M. W. Kroesen, M. Haverlag, J. H. W. G. den Boer, and F. J. de Hoog, Plasma Sources Sci. Technol. 3, 320 (1994).
19. G. S. Gottlieb, R. G. Schad, M. A. Jaso, Surf. Interface Anal. 8, 243 (1986).
20. G. S. Oehrlein, J. F. Rembetski, and E. H. Payne, J. Vac. Sci Technol. B 8, 1199 (1990).
21. D. J. Thomas and P. Southworth, J. Vac. Sci. Technol. 7, 1325 (1989).
22. M. M. Smadi, G. Y. Kong, R. N. Carlile, and S. E. Beck, J. Vac. Sci. Technol. B 10, 30 (1992).
23. R. N. Carlile, J. F. O'Hanlon, L. Hong, M. Garrity, and S. Collins, Plasma Sources Sci. Technol. 3, 337 (1994).
24. P. M. Kopalidis and J. Jorne, J. Electrochem. Soc. 140, 3037 (1993).
25. L. E. Kline, IEEE Trans. Plasma Sci. PS-14, 145 (1986).
26. M. J. Kushner, J. Appl. Phys. 53, 2923 (1982).
27. M. A. Lieberman and A. J. Lichtenberg, Principles of Plasma Discharges and Materials Processing (Wiley, New York, 1994).
28. W. W. Brandt and J. J. Wagner, Plasma Chem. Plasma Process. 3, 329 (1983).
29. K. R. Ryan and I. C. Plumb, Plasma Chem. Plasma Process. 8, 281 (1988).
30. P. M. Kopalidis and J. Jorne, J. Electrochem. Soc. 139, 838 (1992).
31. A. P. Paranjpe, J. P. McVittie, and S. A. Self, J. Appl. Phys. 67, 6718 (1990).
32. D.C. Gray, I. Tepermeister, and H. H. Sawin, J. Vac. Sci. Technol. B 11, 1243 (1993).
33. D. R. Stull, Ind. Engr. Chem. 39, 517 (1947).
34. R. C. Reid and T. K. Sherwood, The Properties of Gases and Liquids (McGraw-Hill, New York, 1966).
35. H. M. Anderson, J. A. Merson, and R. W. Light, IEEE Trans. Plasma Sci. PS-14, 156 (1986).
36. I. Sauers, L. G. Christophorou, and S. M. Spyrou, Plasma Chem. Plasma Process. 13, 17 (1993).
37. L. E. Kline, D. K. Davies, C. L. Chen, and J. Chantry, J. Appl. Phys. 50, 6789 (1979).