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Journal of the Electrochemical Society

Volumn 149, Issue 3, 2002, Pages

Study of conditions for anisotropic plasma etching of tungsten and tungsten nitride using SF6/Ar gas mixtures

(5) Reyes Betanzo, C a Moshkalyov, S A a Ramos, A C b Diniz, J A a Swarta, J W a

a Centro de Componentes Semiconductores (Brazil)

b UNIVERSITY OF CAMPINAS (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; DIFFUSION; ELECTROCHEMICAL ELECTRODES; EMISSION SPECTROSCOPY; MIXTURES; PLASMA DIAGNOSTICS; REACTIVE ION ETCHING; SILICON WAFERS; SULFUR COMPOUNDS; SURFACE PROPERTIES; TUNGSTEN; TUNGSTEN COMPOUNDS;

ACTINOMETRY; ANISOTROPIC PLASMA ETCHING; SURFACE DIFFUSION; TUNGSTEN NITRIDE;

PLASMA ETCHING;

EID: 0036503739 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1446083 Document Type: Article

Times cited : (9)

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