Highly anisotropic silicon reactive ion etching for nanofabrication using mixtures of SF6/CHF3 gases

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 3, 1997, Pages 640-645

  Grigoropoulos, S ^a   Gogolides, E ^a   Tserepi, A D ^a   Nassiopoulos, A G ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010934031     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (29)

1. M. B. Stern and S. S. Madeiros, J. Vac. Sci. Technol. B 10, 2520 (1992).
2. D. A. Baglee, R. R. Doering, M. Elahy, M. Yashiro, D. Clark, S. Crank, and G. Armstrong, Tech. Dig. Int. Electron Devices Meet. 85, 384 (1995).
3. D. Ueda, H. Takagi, and G. Kano, Tech. Dig. Int. Electron Devices Meet. 86, 638 (1986).
4. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
5. H. I. Liu, N. I. Maluf, R. F. W. Peace, D. K. Biegelsen, N. M. Johnson, and F. A. Ponce, J. Vac. Sci. Technol. B 10, 2846 (1992).
6. H. I. Liu, D. K. Biegelsen, N. M. Johnson, F. A. Ponce, and R. F. W. Peace, J. Vac. Sci. Technol. B 11, 2532 (1993).
7. S. Tachi, K. Tsujimoto, and S. Okudaira, Appl. Phys. Lett. 52, 616 (1988).
8. T. Sayau, B. J. Baliga, and R. W Hamaker, J. Electrochem. Soc. 138, 3076 (1991).
9. R. Pinto, K. V. Ramanathan, and R. S. Bahu, J. Electrochem. Soc. 134, 165 (1987).
10. Y. Tzeng and T. H. Lin, J. Electrochem. Soc. 134, 2304 (1987).
11. M. Zhang, J. Z. Li, I. Abesida, and E. D. Wolf, J. Vac. Sci. Technol. B 1, 1037 (1983).
12. P. M. Kopalides and J. Jorne, J. Electrochem. Soc. 139, 839 (1992).
13. R. Legtenberg, H. Jansen, M. de Boer, and M. Elwenspoek, J. Electrochem. Soc. 142, 2020 (1995).
14. V. A. Yunkin, D. Fischer, and E. Voges, Microelectron. Eng. 23, 373 (1994).
15. A. M. Krings, K. Eden, and H. Beneking, Microelectron. Eng. 6, 553 (1987).
16. Y. Tseng, T. H. Lin, and J. Waddell, J. Electrochem. Soc. 137, 2612 (1990).
17. C. C. Tin, T. H. Lin, and Y. Tseng, J. Electrochem. Soc. 138, 3094 (1991).
18. B. D. Musson, F. C. Sze, D. K. Reinhard, and J. Asmussen, J. Vac. Sci. Technol. B 9, 3521 (1991).
19. E. Gogolides, S. Grigoropoulos, and A. G. Nassiopoulos, Microelectron. Eng. 27, 449 (1995).
20. E. Gogolides, D. Tzevelekis, E. Tsoi, M. Halzakis, A-M. Goethels, K-H. Baik, and F. Van Roey, J. Vac. Sci. Technol. B 12, 3914 (1994).
21. E. Gogolides, K. Yannakopoulou, A. Traverse, A. G. Nassiopoulos, E. Tsoi, and M. Hatzakis, Microelectron. Eng. 25, 75 (1994).
22. E. Gogolides, D. Tzevelekis, S. Grigoropoulos, E. Tegou, and M. Hatzakis, J. Vac. Sci. Technol. B 14, 3332 (1996).
23. R. d'Agostino, F. Cramarossa, V. Colaprico, and R. d'Ettole, J. Appl. Phys. 54, 1284 (1983).
24. G. Oehrlein and Y. H. Lee, J. Vac. Sci. Technol. A 5, 1585 (1987).
25. E. van der Drift, T. Zijlstra, R. Cheung, K. Werners, and S. Radelaar, Microelectron. Eng. 23, 343 (1994).
26. A. G. Nassiopoulos, S. Grigoropoulos, D. Papadimitriou, and E. Gogolides, Appl. Phys. Lett. 66, 1114 (1995).
27. S. Grigoropoulos, A. G. Nassiopoulos, A. Travlos, and D. Papadimitriou, Appl. Surf. Sci. 102, 377 (1996).
28. A. G. Nassiopoulos, S. Grigoropoulos, and D. Papadimitriou, Appl. Phys. Lett. 69, 2267 (1996).
29. J. K. Bhardwaj and H. Ashraf, Proc. SPIE 2639, 224 (1995).