Mechanisms of silicon nitride etching by electron cyclotron resonance plasmas using SF6- And NF3-based gas mixtures

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 4, 2004, Pages 1513-1518

  Reyes Betanzo, C ^a   Moshkalyov, S A ^b   Ramos, A C S ^b   Swart, J W ^b  

^a INSTITUTO NACIONAL DE ASTROFÍSICA   (Mexico)

^b UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGETIC PLASMA IONS; ETCHING GASES; GAS MIXTURES; GAS-PHASE REACTIONS;

DISSOCIATION; ELECTRON CYCLOTRON RESONANCE; FREE RADICALS; ION BOMBARDMENT; MIXTURES; PLASMA DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA FLOW; SILICA; SILICON NITRIDE; SPECTROSCOPIC ANALYSIS; SURFACE REACTIONS; THIN FILMS;

PLASMA ETCHING;

EID: 4344582265     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1701858     Document Type: Conference Paper

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