Mechanism of tungsten atom formation in tungsten etchback using SF6/Ar helicon plasma

Journal of the Electrochemical Society

Volumn 144, Issue 7, 1997, Pages 2442-2447

  Choi, Chang Ju ^a   Seol, Yeo Song ^a   Kwon, O Sung ^a   Baik, Ki Ho ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ATOMS; DENSITY (SPECIFIC GRAVITY); DISSOCIATION; EMISSION SPECTROSCOPY; ETCHING; HELICONS; LIGHT EMISSION; SILICON COMPOUNDS; SPUTTER DEPOSITION; TUNGSTEN;

SILICON HEXAFLUORIDE; TUNGSTEN ETCHBACK;

METALLIC FILMS;

EID: 0031187862     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837834     Document Type: Article

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