Silicon nitride etching in high- and low-density plasmas using SF6/O2/N2 mixtures

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 2, 2003, Pages 461-469

  Reyes Betanzo, C ^a   Moshkalyov, S A ^a   Swart, J W ^a   Ramos, A C S ^a  

^a UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

NITROGEN OXIDES; REACTION KINETICS; REACTIVE ION ETCHING; REDUCTION; SILICA; SILICON NITRIDE;

HIGH-DENSITY REACTORS;

PLASMAS;

EID: 0037349933     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1547703     Document Type: Article

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