Highly anisotropic silicon and polysilicon room-temperature etching using fluorine-based high density plasmas

Microelectronic Engineering

Volumn 41-42, Issue , 1998, Pages 411-414

  Tserepi, A ^a   Gogolides, E ^a   Cardinaud, C ^b   Rolland, L ^b   Turban, G ^b  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ANALYSIS; FLUORINE COMPOUNDS; SILICON; SPECTROSCOPY; TEMPERATURE;

INDUCTIVELY COUPLED PLASMA REACTOR; POLYSILICON;

PLASMA ETCHING;

EID: 12844261289     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00095-1     Document Type: Article

References (4)

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2. S. Grigoropoulos, E. Gogolides, A. Tserepi, A.G. Nassiopoulos, J. Vac. Sci. Technol. B 15 (1997) 640.
3. J.K. Bhardwaj, H. Ashraf, Proc. SPIE Vol. 2639 (1996) 224.
4. J.W. Coburn and M. Chen, J. Appl. Phys. 51 (1980) 3134.