Atomic layer deposited ultrathin HfO2 and Al2O 3 films as diffusion barriers in copper interconnects

Electrochemical and Solid-State Letters

Volumn 10, Issue 10, 2007, Pages

  Majumder, Prodyut ^a,c   Katamreddy, Rajesh ^a   Takoudis, Christos ^a,b,c  

^a University of Illinois at Chicago   (United States)

^b University of Illinois at Chicago   (United States)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ATOMIC LAYER DEPOSITION; COPPER COMPOUNDS; DIFFUSION BARRIERS; SHEET RESISTANCE; THIN FILMS;

ATOMIC LAYER DEPOSITED ULTRATHIN; BARRIER FILMS; SHEET RESISTANCE MEASUREMENTS;

HAFNIUM COMPOUNDS;

EID: 34547837552     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2756633     Document Type: Article

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