Diffusion barrier performances of direct current sputter-deposited Mo and MoxN films between Cu and Si

Journal of Crystal Growth

Volumn 263, Issue 1-4, 2004, Pages 203-207

  He, Y ^a   Feng, J Y ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

A1. Crystal structure; A1. X ray diffraction; B1. Nitrides

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; DIFFUSION; ELECTRIC CURRENTS; METALLIZING; MOLYBDENUM COMPOUNDS; NITRIDES; SCANNING ELECTRON MICROSCOPY; SPUTTER DEPOSITION; THERMODYNAMIC STABILITY; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

DIFFUSION BARRIER; DIRECT CURRENT;

CRYSTAL GROWTH;

EID: 1242263869     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.005     Document Type: Article

References (14)

1. Kim D.H., Cho S.L., Kim K.B., Kim J.J., Park J.W., Kim J.J. Appl. Phys. Lett. 69:1996;4182.
2. Olowolafe J.O., Li J., Mayer J.W., Colgan E.G. Appl. Phys. Lett. 58:1991;469.
3. Lee H.J., Kwon K.W., Ryu C., et al. Acta Mater. 47(15):1999;3965.
4. Wang S.Q., Suthar S., Hoeflich C., Burrow B.J. J. Appl. Phys. 73:1993;2301.
5. Yang C.Y., Jeng J.S., Chen J.S. Thin Solid Films. 420-421:2002;398.
6. Hirvonen J.-P., Suni I., Kattelus H., Lappalainen R., Torri P., Kung H., Jervis T.R., Nastasi M., Tesmer J.R. Surf. Coat. Technol. 74-75:1995;981.
7. Gokce O.H., Amin S., Ravindra N.M., Szostak D.J., Paff R.J., Fleming J.G., Galewski C.J., Shallenberger J., Eby R. Thin Solid Films. 353:1999;149.
8. Kattelus H.P., Nicolet M.-A. Gupta D., Ho P.S. Diffusion Phenomena in Thin Films and Microelectronic Materials. 1988;Noyes Publications, Park Ridge, NJ.
9. Lee J.-Y., Park J.-W. Jpn. J. Appl. Phys. 35:1996;4280.
10. Chuang J.C., Tu S.L., Chen M.C. Thin Solid Films. 346:1999;299.
11. Liu H.T., Wu Z.Q. Knowledge Evolvement. 31:2002;11. (in Chinese).
12. Miller K.T., Lange F.F., Marshall D.B. J. Mater. Res. 5:1990;151.
13. Nolan T.P., Sinclair R., Beyers R. J. Appl. Phys. 71:1992;720.
14. Rha J.J., Park J.K. J. Appl. Phys. 71:1997;1608.