Failure mechanism of a multilayer (TiN/Al/TiN) diffusion barrier between copper and silicon

Journal of Applied Physics

Volumn 92, Issue 9, 2002, Pages 5512-5519

  Kim, Soo Hyun ^a   Nam, Ki Tae ^a   Datta, Arindom ^a   Kim, Ki Bum ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER PERFORMANCE; BARRIER PROPERTIES; CU METALLIZATION; FAILURE MECHANISM; FAST DIFFUSION; INTERLAYER THICKNESS; OXYGEN CONTENT; SOLID SOLUBILITIES; TIN FILMS; TIN LAYERS;

DIFFUSION BARRIERS; ENERGY DISPERSIVE SPECTROSCOPY; GRAIN BOUNDARIES; METALLIC FILMS; MULTILAYERS; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM;

EID: 18744365576     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1509102     Document Type: Article

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