ITO as a diffusion barrier between Si and Cu

Journal of the Electrochemical Society

Volumn 152, Issue 3, 2005, Pages

  Liu, C M ^a   Liu, W L ^a   Chen, W J ^b   Hsieh, S H ^a   Tsai, T K ^a   Yang, L C ^a  

^a NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^b NATIONAL PINGTUNG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COPPER; DIFFUSION; ELECTRON DIFFRACTION; ENERGY DISPERSIVE SPECTROSCOPY; MICROELECTRONICS; MOS DEVICES; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON; SPUTTER DEPOSITION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

DIFFUSION BARRIERS; INDIUM TIN OXIDES (ITO); MEAN FREE PATH; SHEET RESISTANCE MEASUREMENTS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 15744372982     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1860511     Document Type: Article

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