Effect of tin-doped indium oxide film thickness on the diffusion barrier between silicon and copper

Thin Solid Films

Volumn 515, Issue 4, 2006, Pages 2387-2392

  Liu, W L ^a   Chen, W J ^b   Tsai, T K ^a   Hsieh, S H ^a   Liu, C M ^a  

^a NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^b NATIONAL PINGTUNG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Copper; Diffusion; Indium tin oxide; Silicon

Indexed keywords

DIFFUSION; SCANNING ELECTRON MICROSCOPY; SILICON; SPUTTERING; TIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

RAPID THERMAL ANNEALING FURNACE; SHEET RESISTANCE; SPUTTERING DEPOSITION;

INDIUM COMPOUNDS;

EID: 33750836706     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.04.042     Document Type: Article

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