Direct nanoimprinting of metal nanoparticles for nanoscale electronics fabrication

Nano Letters

Volumn 7, Issue 7, 2007, Pages 1869-1877

  Ko, Seung H ^a   Park, Inkyu ^b   Pan, Heng ^a   Grigoropoulos, Costas P ^a   Pisano, Albert P ^b   Luscombe, Christine K ^b   Fréchet, Jean M J ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c UNIVERSITY OF WASHINGTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NANOIMPRINTING; NANOPARTICLE SOLUTION;

FIELD EFFECT TRANSISTORS; FLUIDICS; LOW TEMPERATURE EFFECTS; MELTING POINT; NANOWIRES; RESISTORS;

NANOPARTICLES;

GOLD; METAL NANOPARTICLE; UNCLASSIFIED DRUG;

ARTICLE; CHEMISTRY; ELECTRONICS; NANOTECHNOLOGY; SEMICONDUCTOR;

ELECTRONICS; GOLD; METAL NANOPARTICLES; NANOTECHNOLOGY; TRANSISTORS;

EID: 34547643158     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl070333v     Document Type: Article

References (38)

1. Trucskett, V. N.; Watt, M. P. C. Trends Biotechnol. 2006, 24 (7), 312-317.
2. Nakamatsu K.; Matsui, S. Jpn. J. Appl. Phys. 2006, 45 (21), L546-548.
3. Seekamp, J.; Zankovych, S.; Heifer, A. H.; Maury, P.; Sotomayor Torres, C. M.; Boettger, G.; Liguda, C.; Eich, M.; Heidari, B.; Montelius, L.; Ahopelto, J. Nanotechnology 2002, 13 (5), 581-586.
4. Wu, W.; Jung, G.-Y.; Olynick, D.; Straznicky, J.; Li, Z.; Li, X.; Ohlberg, D.; Chen, Y.; Wang, S.-Y.; Liddle, J.; Tong, W.; Williams, R. S. Appl. Phys. A 2005, 80 (6), 1173-1178.
5. Kim, C.; Stein, M.; Forrest, S. R. Appl. Phys. Lett. 2002, 80, 4051-4053.
6. Clavijo-Cedeño, C.; Seekamp, J. A.; Kam, P.; Hoffmann, T.; Zankovych, S.; Sotomayor Torres, C. M.; Menozzi, C.; Cavallini, M.; Murgia, M.; Ruani, G.; Biscarini, F.; Behl, M.; Zentel, R.; Ahopelto, J. Microelectron. Eng. 2002, 67-62, 25-31.
7. Wu, W.; Cui, B.; Sun, X. Y.; Zhang, W.; Zhunag, L.; and Chou, S. Y. J. Vac. Sci. Technol., B 1998, 16, 3825-3829.
8. Chou, S. Y.; Krauss, P. R.; Renstrom, P. J. Science 1996, 272, 85-87.
9. Haisma, J.; Verheijen, M.; van der Heuvel, K.; van der Berg, J. J. Vac. Sci. Technol., B 1996, 14, 4124-4128.
10. Colburn, M.; Johnson, S.; Stewart, M.; Damle, S.; Bailey, T.; Choi, B.; Wedlake, M.; Michaelson, T.; Sreenivasan, S. V.; Ekerdt, J.; Willson, C. G. Proc. SPIE 1999, 3676, 379-389.
11. Sotomayor Torres, C. M. Alternative Lithography; Springer: New York, 2003.
12. Schift, H.; Heyderman, L. J.; Auf der Maur, M.; Gobrecht, J. Nanotechnology 2001, 12, 173-177.
13. Yoshihiko, H.; Toshihiko, U.; Tomohiro, K.; Takashi, M. Proc. SPIE 2003, 5220, 74-81.
14. Chen, H. L.; Chuang, S. Y.; Cheng, H. C.; Lin, C. H.; Chu, T. C. Microelectron. Eng. 2006, 83, 893-896.
15. Heyderman, L. J.; Schift, H.; David, C.; Gobrecht, J.; Schweizer, T. Microelectron. Eng. 2000, 54 (3-4), 229-245.
16. Sirringhaus, H.; Kawase, T.; Friend, R. H.; Shimoda, T.; Inbasekaran, M.; Wu, W.; Woo, E. P. Science 2000, 290, 2123-2126.
17. Chung, J.; Ko, S.; Bieri, N. R.; Grigoropoulos, C. P.; Poulikakos, D. Appl. Phys. Lett. 2004, 84, 801-803.
18. Chung, J.; Bieri, N. R.; Ko, S.; Grigoropoulos, C. P.; Poulikakos, D. Appl. Phys. A 2004, 79, 1259-1261.
19. Bao, Z.; Feng, Y.; Dodavalapur, A.; Raju, V. R.; Lovinger, A. J. Chem. Mater 1997, 9, 1299-1301.
20. Piqué, A.; Chrisey, D. B.; Fritz-Gerald, J. M.; McGill, R. A.; Auyeng, R. C. Y.; Wu, H. D.; Lakeou, S.; Nguyen, V.; Chung, R.; Duiganan, M. J. Mater. Res. 2000, 15, 1872-1875.
21. Blanchet, G. B.; Loo, Y. L.; Rogers, J. A.; Gao, F.; Fincher, C. R. Appl. Phys. Lett. 2003, 82, 463-465.
22. Buffat, P. A.; Borel, J. P. Phys. Rev. A 1976, 13, 2287-2298.
23. Ko, S.; Choi, Y.; Hwang, D. J.; Grigoropoulos, C. P.; Poulikakos, D. Appl. Phys. Lett. 2006, 89, 141126-141128.
24. Hostetier, M. J.; Wingate, J. E.; Zhong, C. J.; Harris, H. E.; Vachet, R. W.; Clark, M. R.; Nondono, J. D.; Green, S. J.; Stokes, J. J.; Wignall, G. D.; Glish, G. L.; Porter, M. D.; Evans, N. D.; Murray, R. W. Langmuir 1998, 14 (1), 17-30.
25. Kim, E.; Xia, Y.; Zhao, X.; Whitesides, G. M. Adv. Mater 1997, 9, 651-654.
26. Kljan, R.; Bishop, J. M.; Fialkowski, M.; Paszewski, M.; Campbell, C. J.; Gray, T. P.; Grzybowski, B. A. Science 2007, 316, 261-264.
27. Reddy, S.; Schunk, P. R.; Bonnecaze, R. T. Phys. Fluid 2005, 17, 122104(1-6).
28. Johnson, S.; Burns, R.; Kim, E. K.; Dickey, M.; Schmid, G.; Meiring, J.; Burns, S.; Willson, C. G.; Convery, D.; Wei, Y.; Fejes, P.;Gehoski, K.; Mancini, D.; Nordquist, K.; Dauksher, W. J.; Resnick, D. J. J. Vac. Sci. Technol, B 2005, 23 (6), 2553-2556.
29. Scheer, H. C.; Schulz, H. Microelectron. Eng. 2001, 56, 311-332.
30. Park, I.; Cheng, J.; Pisano, A. P.; Lee, E.; Jeong, J. Appl Phys. Lett. 2007, 90, 093902(1-3).
31. de Gennes, P. G.; Brochard-Wyart, F.; Quere, D. Capillarity and wetting phenomena; Springer: New York, 2004.
32. Zschieschang, U.; Klauk, H.; Halik, M.; Schmid, G.; Dehm, C. Adv. Mater. 2003, 15, 1147-1151.
33. Burns, S. E.; Cain, P.; Mills, H.; Wang, J.; Sirringhaus, H. MRS Bull. 2003, Nov, 829-834.
34. Murphy, A. R.; Liu, J.; Luscombe, C.; Kavulak, D.; Frechet, J. M. J.; Kline, R. J.; McGehee, M. D. Chem. Mater. 2005, 17, 4892-4899.
35. Ko, S.; Pan, H.; Grigoropoulos, C. P.; Luscombe, C.; Frechet, J. M. J.; Poulikakos, D. Appl. Phys. Lett. 2007, 90, 141103(1-3).
36. Pierret, R. F. Semiconductor Device Fundamentals; Addison Wesley: New York, 1996.
37. 22 fitting their experimental data.
38. Arcidiacono, S.; Bieri, N. R.; Poulikakos, D.; Grigoropoulos, C. P. Inter. J. Multiphase Flow 2004, 30, 979-994.