Analysis of charge transport in a polycrystalline pentacene thin film transistor by temperature and gate bias dependent mobility and conductance

Journal of Applied Physics

Volumn 102, Issue 2, 2007, Pages

  Guo, Dong ^a   Miyadera, Tetsuhiko ^a   Ikeda, Susumu ^a   Shimada, Toshihiro ^a   Saiki, Koichiro ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CHARGE TRANSFER; ELECTRIC CONDUCTANCE; GATE DIELECTRICS; POLYCRYSTALLINE MATERIALS; THRESHOLD VOLTAGE;

ARRHENIUS-LIKE BEHAVIOR; GATE BIAS; MULTIPLE TRAPPING MODEL; PENTACENE;

THIN FILM TRANSISTORS;

EID: 34547580481     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2753671     Document Type: Article

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