Effect of active layer thickness on device properties of organic thin-film transistors based on Cu(II) phthalocyanine

Journal of Applied Physics

Volumn 92, Issue 10, 2002, Pages 6028-6032

  Hoshino, Satoshi ^a   Kamata, Toshihide ^a   Yase, Kiyoshi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; BIAS DEPENDENCE; BOTTOM-CONTACT; CARRIER TRANSPORT PROCESS; CARRIER TRAPPING; CONDUCTION CHANNEL; DEVICE PROPERTIES; FIELD-EFFECT MOBILITIES; GATE INSULATOR; OPERATING PERFORMANCE; ORGANIC THIN FILM TRANSISTORS; SOURCE-DRAIN; THIN-FILM TRANSISTOR (TFTS);

NITROGEN COMPOUNDS;

THIN FILM TRANSISTORS;

EID: 0037113014     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1515373     Document Type: Article

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