Influence of the normalized ion flux on the constitution of alumina films deposited by plasma-assisted chemical vapor deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 25, Issue 4, 2007, Pages 831-836

  Kurapov, Denis ^a   Reiss, Jennifer ^a   Trinh, David H ^b   Hultman, Lars ^b   Schneider, Jochen M ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; FLUXES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THIN FILMS;

ALUMINA THIN FILMS; CATHODE VOLTAGE; IMPURITY INCORPORATION;

IONS;

EID: 34547484886     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2748802     Document Type: Article

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