Effects of etching depth for n-contact and current spreading layer in InGaN/GaN light emitting diodes

Semiconductor Science and Technology

Volumn 19, Issue 6, 2004, Pages 774-777

  Shim, H W ^a   Kim, Y K ^a   Suh, E K ^a   Lee, H J ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC BREAKDOWN; ETCHING; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

CURRENT SPREADING LAYERS; ETCHING DEPTH; MULTIPLE QUANTUM WELLS (MQW);

LIGHT EMITTING DIODES;

EID: 2942535010     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/6/021     Document Type: Article

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