Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 73, Issue 14, 1998, Pages 2024-2026

  Nagai, H ^a   Zhu, Q S ^a   Kawaguchi, Y ^a   Hiramatsu, K ^a   Sawaki, N ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000564832     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122356     Document Type: Article

References (7)

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