Effects of additive C4 F8 during inductively coupled B Cl3 C4 F8 Ar plasma etching of TaN and Hf O2 for gate stack patterning

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 25, Issue 4, 2007, Pages 990-995

  Ko, J H ^a   Kim, D Y ^a   Park, M S ^a   Lee, N E ^a   Lee, S S ^b   Ahn, Jinho ^b   Mok, Hyungsoo ^c  

^a Sungkyunkwan University   (South Korea)

^b Hanyang University   (South Korea)

^c Konkuk University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYST SELECTIVITY; HAFNIUM ALLOYS; PASSIVATION; PLASMA ETCHING; PLASMAS;

ETCH RATE; ETCH TIME; GATE STACK PATTERNING; INITIATION TIME;

TANTALUM ALLOYS;

EID: 34547318722     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2747621     Document Type: Article

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