Optimizing the dielectric performance of Ti O2 thin films through control of plasma-enhanced chemical vapor deposition process conditions

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 25, Issue 4, 2007, Pages 1298-1301

  Yang, Wenli ^a   Monson, Alexander ^a   Marino, Joseph ^a   Wolden, Colin A ^a  

^a Department of Geology and Geological Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIELECTRIC PROPERTIES; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THIN FILMS;

FLATBAND VOLTAGE; LEAKAGE CURRENT DENSITY; OXYGEN DENSITY;

TITANIUM DIOXIDE;

EID: 34547260931     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2484649     Document Type: Article

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