Oxygen pressure dependence of physical and electrical properties of LaAlO3 gate dielectric

Microelectronic Engineering

Volumn 77, Issue 3-4, 2005, Pages 399-404

  Lu, X B ^a,b   Lu, H B ^a   Dai, J Y ^b   Chen, Z H ^a   He, M ^a   Yang, G Z ^a   Chan, H L W ^b   Choy, C L ^b  

^a INSTITUTE OF PHYSICS   (China)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

Effective oxide thickness; Flatband voltage; High k dielectric; Interfacial reaction; Leakage current; Oxygen pressure

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; OXYGEN; PRESSURE EFFECTS; SILICON; SUBSTRATES; THICKNESS MEASUREMENT;

EFFECTIVE OXIDE THICKNESS (EOT); FLATBAND VOLTAGE; HIGH K DIELECTRICS; INTERFACIAL REACTION; OXYGEN PRESSURE;

LANTHANUM COMPOUNDS;

EID: 15344350277     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.01.023     Document Type: Article

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