Implantation and annealing of aluminum in 4H silicon carbide

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 237, Issue 1-2, 2005, Pages 68-71

  Rambach, M ^a   Schmid, F ^a   Krieger, M ^a   Frey, L ^a,b   Bauer, A J ^b   Pensl, G ^a   Ryssel, H ^a,b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

Annealing; Hall scattering factor; Implantation temperature; Mobility; Sheet resistance; Silicon carbide

Indexed keywords

ANNEALING; DIFFUSION; ELECTRIC RESISTANCE; ION IMPLANTATION; SILICON CARBIDE; THERMAL EFFECTS;

HALL SCATTERING FACTOR; IMPLANTATION TEMPERATURE; MOBILITY; SHEET RESISTANCE;

ALUMINUM;

EID: 23644441135     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.04.079     Document Type: Conference Paper

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